A comprehensive source of references is to be found in the Proceedings of the International Conference of Microelectronic Test Structures, sponsored by the IEEE Electron Devices Society.
- 1
L. J. van der Pauw
A method of measuring specific resistivity and Hall effect of discs of arbitrary shape,
Philips Res. Rep.,
13:
1–9,
1958.
- 2
M. G. Buehler et al.
J. Electrochem. Soc.,
125:
645–650,
1978.
- 3
J. M. David et al.
J. Electrochem. Soc.,
125:
645–650,
1978.
- 4
M. W. Cresswell et al.
Integ. Cir. Met., Insp. Proc. Cont., VIII (2196): 512, 1994.
- 5
M. G. Buchler et al.
IEEE Trans. Electron Devices,
ED-33:
1572–1579,
1986.
- 6
R. A. Allen et al.
IEEE Electron Device Lett.,
13:
322–324,
1992.
- 7
M. W. Cresswell et al.
IEEE Trans. Semicond. Manuf.,
10:
250,
1997.
- 8
R. A. Allen et al. Voltage-dividing potentiometer enhancements for high-precision feature placement metrology,
Proc. IEEE 1992 Int. Conf. Microelectron. Test Structures, 1992, pp. 174–179.
- 9
D. Morrow et al. A new improved electrical vernier to measure mask misalignment,
ESSDERC 90, 1990, pp. 85–88.
- 10
M. Syrzycki
Electron. Letts., 26 (14): 1009–1011, 1990.
- 11
M. Fallon et al. A novel test structure to measure emitter-base misalignment,
Proc. IEEE 1997 Int. Conf. Microelectron. Test Structures, 1997, pp. 156–158.
- 12
H. H. Berger
Contact resistance and contact resistivity,
J. Electrochem. Soc., 119 (4).
- 13
K. Murray
Measuring dimensions using Murray daggers,
Semiconductor Int.,
5 (12):
69–73,
1982.
- 14
Real time determination of interconnect metrology,
Proc. SPIE, 2874: 36–41, 1996.
- 15
A. E. H. Nicolliah
A. J. Brews
MOS (Metal Oxide Semiconductor) Physics,
New York:
Wiley,
1982.
- 16
C. Hess et al. Control of application specific interconnection on gate arrays using an active checkerboard test structure,
Proc. IEEE Int. Conf. Microelectron. Test Structures, 1996, pp. 55–60.
- 17
P. Antognetti et al.
Semiconductor Device Modeling with SPICE, New York: McGraw-Hill, 1988.