physica status solidi (b)
Volume 210, Issue 2 pp. 317-320
Original Paper

New Complex Defect in Heavily Doped GaAs:Zn Grown by Liquid Phase Epitaxy

T.S. Shamirzaev, 

T.S. Shamirzaev

Institute of Semiconductor Physics, Siberian Branch of the Russian Academy of Sciences, pr. Lavrenteva 13, 630090 Novosibirsk, Russia, Tel.: +7 (3832) 343807, Fax: +7 (3832) 332771

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K.S. Zhuravlev, 

K.S. Zhuravlev

Institute of Semiconductor Physics, Siberian Branch of the Russian Academy of Sciences, pr. Lavrenteva 13, 630090 Novosibirsk, Russia, Tel.: +7 (3832) 343807, Fax: +7 (3832) 332771

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N.A. Yakusheva, 

N.A. Yakusheva

Institute of Semiconductor Physics, Siberian Branch of the Russian Academy of Sciences, pr. Lavrenteva 13, 630090 Novosibirsk, Russia, Tel.: +7 (3832) 343807, Fax: +7 (3832) 332771

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I.P. Petrenko, 

I.P. Petrenko

Institute of Semiconductor Physics, Siberian Branch of the Russian Academy of Sciences, pr. Lavrenteva 13, 630090 Novosibirsk, Russia, Tel.: +7 (3832) 343807, Fax: +7 (3832) 332771

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First published: 29 January 1999
https://doi.org/10.1002/(SICI)1521-3951(199812)210:2<317::AID-PSSB317>3.0.CO;2-X
Citations: 1

Abstract

The photoluminescence properties of heavily doped GaAs:Zn (100) layers grown by liquid phase epitaxy from gallium and bismuth solutions at various temperatures have been studied. It was shown that a line at 1.35 eV connected with the novel defect appears in photoluminescence spectra of the layers doped at a level above 1019 cm−3. It has been found that the defect is a neutral complex consisting of native point defects of GaAs.

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