A Study of Strong Photoluminescence of SiOx:H Films
Zhi-Xun Ma
State Laboratory for Surface Physics, Institute of Semiconductors, Center for Condensed Matter Physics, Chinese Academy of Sciences, P.O. Box 912, 100083 Beijing, People's Republic of China
Search for more papers by this authorXian-Bo Liao
State Laboratory for Surface Physics, Institute of Semiconductors, Center for Condensed Matter Physics, Chinese Academy of Sciences, P.O. Box 912, 100083 Beijing, People's Republic of China
Search for more papers by this authorWen-Chao Cheng
State Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, 100083 Beijing, People's Republic of China
Search for more papers by this authorJie He
State Laboratory for Surface Physics, Institute of Semiconductors, Center for Condensed Matter Physics, Chinese Academy of Sciences, P.O. Box 912, 100083 Beijing, People's Republic of China
Search for more papers by this authorGuo-Zhen Yue
State Laboratory for Surface Physics, Institute of Semiconductors, Center for Condensed Matter Physics, Chinese Academy of Sciences, P.O. Box 912, 100083 Beijing, People's Republic of China
Search for more papers by this authorYong-Qian Wang
State Laboratory for Surface Physics, Institute of Semiconductors, Center for Condensed Matter Physics, Chinese Academy of Sciences, P.O. Box 912, 100083 Beijing, People's Republic of China
Search for more papers by this authorHong-Wei Diao
State Laboratory for Surface Physics, Institute of Semiconductors, Center for Condensed Matter Physics, Chinese Academy of Sciences, P.O. Box 912, 100083 Beijing, People's Republic of China
Search for more papers by this authorGuang-Lin Kong
State Laboratory for Surface Physics, Institute of Semiconductors, Center for Condensed Matter Physics, Chinese Academy of Sciences, P.O. Box 912, 100083 Beijing, People's Republic of China
Search for more papers by this authorZhi-Xun Ma
State Laboratory for Surface Physics, Institute of Semiconductors, Center for Condensed Matter Physics, Chinese Academy of Sciences, P.O. Box 912, 100083 Beijing, People's Republic of China
Search for more papers by this authorXian-Bo Liao
State Laboratory for Surface Physics, Institute of Semiconductors, Center for Condensed Matter Physics, Chinese Academy of Sciences, P.O. Box 912, 100083 Beijing, People's Republic of China
Search for more papers by this authorWen-Chao Cheng
State Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, 100083 Beijing, People's Republic of China
Search for more papers by this authorJie He
State Laboratory for Surface Physics, Institute of Semiconductors, Center for Condensed Matter Physics, Chinese Academy of Sciences, P.O. Box 912, 100083 Beijing, People's Republic of China
Search for more papers by this authorGuo-Zhen Yue
State Laboratory for Surface Physics, Institute of Semiconductors, Center for Condensed Matter Physics, Chinese Academy of Sciences, P.O. Box 912, 100083 Beijing, People's Republic of China
Search for more papers by this authorYong-Qian Wang
State Laboratory for Surface Physics, Institute of Semiconductors, Center for Condensed Matter Physics, Chinese Academy of Sciences, P.O. Box 912, 100083 Beijing, People's Republic of China
Search for more papers by this authorHong-Wei Diao
State Laboratory for Surface Physics, Institute of Semiconductors, Center for Condensed Matter Physics, Chinese Academy of Sciences, P.O. Box 912, 100083 Beijing, People's Republic of China
Search for more papers by this authorGuang-Lin Kong
State Laboratory for Surface Physics, Institute of Semiconductors, Center for Condensed Matter Physics, Chinese Academy of Sciences, P.O. Box 912, 100083 Beijing, People's Republic of China
Search for more papers by this authorAbstract
We have examined photoluminescence (PL), IR absorption and Raman spectra of a series of hydrogenated amorphous silicon oxide (a-SiOx:H, (0 < x < 2)) films fabricated by plasma enhanced chemical vapor deposition (PECVD). Two strong luminescence bands were observed at room temperature, one is a broad envelope comprising a main peak around 670 nm and a shoulder at 835 nm, and the other, peaked around 850 nm, is found only after being annealed up to 1170 °C in N2 environment. In conjunction with IR and Raman spectra, the origins of the two luminescent bands and their annealing behaviors are discussed on the basis of quantum confinement effects.
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