Non-Equilibrium Transport in Anderson Insulators

We report observations of glass behavior of an electronic system in an Anderson insulator. The system used is a MOSFET-like structure with a thin film of In₂O_3—x serving as the active element. The glassy behavior is reflected as a local minimum at the ‘cool-down’ gate voltage in the conductance vs. gate-voltage, G(V_g) sweeps. Relaxation is monitored as a function of temperature and film disorder. Studying certain features of the G(V_g) minima reveals that interactions are important in the relaxation process.