Communication
Low-Temperature, Catalyzed Growth of Indium Nitride Fibers from Azido-Indium Precursors
First published: 13 April 2000
Citations: 93
This work was supported by the U.S. National Science Foundation (Grant CHE-9709104). We gratefully acknowledge assistance from Dr. W. R. Winchester with GC-MS and Dr. Couture with X-ray fluorescence studies.
Graphical Abstract
New blue/violet laser diodes and LEDs need InN-containing alloys to provide the light-emitting constituents, but InN typically requires crystal growth temperatures (427 – 550 °C) commensurate with its decomposition. A new method allows InN synthesis as a fiber (see picture) at only 203 °C. This method suggests new approaches to produce thermally unstable materials.
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