2.4 GHz single-balanced diode mixer fabricated on Al₂O₃ substrate by thin-film technology

A passive balun using spiral inductors and interdigital capacitors has been developed for a 2.4 GHz balanced diode mixer on Al₂O₃ substrates. Using this passive balun on the input port (RF port and LO port) of a mixer circuit and incorporating the Schottky diode model, a wideband single-balanced diode mixer was designed, fabricated, and characterized © 2000 John Wiley & Sons, Inc. Microwave Opt Technol Lett 25: 83–86, 2000.